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LIGHT EMITTING DIODES, CAN THEY BE EFFICIENT.PEAKER AR; HAMILTON B.1976; MICROELECTRONICS; G.B.; DA. 1976; VOL. 7; NO 3; PP. 5-11; BIBL. 5 REF.Article

THE GROWTH OF GALLIUM PHOSPHIDE LAYERS OF HIGH SURFACE QUALITY BY LIQUID PHASE EPITAXY. A COMMERCIAL PROCESS FOR GREEN LICHT EMITTING DIODES.MOTTRAM A; PEAKER AR.1974; J. CRYST. GROWTH; NETHERL.; DA. 1974; VOL. 27; PP. 193-204; BIBL. 31 REF.Article

NITROGEN DOPING PROFILES IN GALLIUM PHOSPHIDE GROWN BY LIQUID PHASE EPITAXYHAYES TJ; MOTTRAM A; PEAKER AR et al.1979; J. CRYST. GROWTH; NLD; DA. 1979; VOL. 46; NO 1; PP. 59-68; BIBL. 15 REF.Article

DETECTION OF MINORITY-CARRIER TRAPS USING TRANSIENT SPECTROSCOPYBRUNWIN R; HAMILTON B; JORDAN P et al.1979; ELECTRON. LETTERS; GBR; DA. 1979; VOL. 15; NO 12; PP. 349-350; BIBL. 5 REF.Article

DEEP-LEVEL CONTROLLED LIFETIME AND LUMINESCENCE EFFICIENCY IN GAP.HAMILTON B; PEAKER AR; BRAMWELL S et al.1975; APPL. PHYS. LETTERS; U.S.A.; DA. 1975; VOL. 26; NO 12; PP. 702-704; BIBL. 8 REF.Article

NICKEL, A PERSISTENT INADVERTENT CONTAMINANT IN DEVICE-GRADE VAPOUR EPITAXIALLY GROWN GALLIUM PHOSPHIDE.DEAN PJ; WHITE AM; HAMILTON B et al.1977; J. PHYS. D; G.B.; DA. 1977; VOL. 10; NO 18; PP. 2545-2554; BIBL. 17 REF.Article

A DEEP CENTER ASSOCIATED WITH THE PRESENCE OF NITROGEN IN GAP.SMITH BL; HAYES TJ; PEAKER AR et al.1975; APPL. PHYS. LETTERS; U.S.A.; DA. 1975; VOL. 26; NO 3; PP. 122-124; BIBL. 13 REF.Article